? 2004 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 160 a i c110 t c = 110 c80a i f110 t c = 110 c IXGN80N60A2d1 60 a i cm t c = 25 c, 1 ms 320 a ssoa v ge = 15 v, t vj = 125 c, r g = 2.0 ? i cm = 160 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 625 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g v ces = 600 v i c25 = 160 a v ce(sat) = 1.35 v sot-227b, minibloc features international standard package minibloc ul recognized aluminium nitride isolation - high power dissipation isolation voltage 3000 v~ very high current igbt low v ce(sat) for minimum on-state conduction losses mos gate turn-on - drive simplicity low collector-to-case capacitance (< 50 pf) low package inductance (< 5 nh) - easy to drive and to protect applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages easy to mount with 2 screws space savings high power density g = gate, c = collector, e = emitter either emitter terminal can be used as main or kelvin emitter g e e c symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 1 ma, v ce = v ge 2.5 5.5 v i ces v ce = v ces, v ge = 0 v 80n60a2 25 a note 3 80n60a2d1 650 a i ges v ce = 0 v, v ge = 20 v 400 na v ce(sat) i c = i c110 , v ge = 15 v, note 1 1.2 1.35 v ds99180(05/04) igbt optimized for switching up to 5 khz advanced technical data e153432 ixgn 80n60a2 ixgn 80n60a2d1 e d1
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 sot-227b minibloc symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60 a; v ce = 10 v, note 1 tbd s c ies tbd pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz tbd pf c res tbd pf q g tbd nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces tbd nc q gc tbd nc t d(on) tbd n s t ri tbd n s t d(off) tbd n s t fi 250 ns e off 4mj t d(on) tbd n s t ri tbd n s e on tbd mj t d(off) tbd n s t fi tbd n s e off 10 mj r thjc 0.2 k/w r thck 0.05 k/w inductive load, t j = 25 c i c = i c110 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 2.0 ? inductive load, t j = 125 c i c = i c110 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 2.4 ? ixgn 80n60a2d1 note: 1. pulse test, t 300 s, duty cycle d 2% 2. remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g 3. parts must be heatsunk for high temperature i ces measurements reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions typ. max. v f i f = 60 a, note 1 2.05 v t j = 150 c 1.4 v i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s 8.0 a v r = 100 v, t j = 100 c t rr i f = 1 a, -di/dt = 50 a/ s, v r = 30 v 35 ns r thjc 1.65 k/w
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